Nitrogen Dioxide Detection with Ambipolar Silicon Nanowire Transistor Sensors.

• Tác giả: Subhajit Biswas, Ahmad Echresh, Yordan M Georgiev, Sayantan Ghosh, S Hellebust, Justin D Holmes, Leonidas Tsetseris, Vaishali Vardhan
• Ngôn ngữ: eng
• Ký hiệu phân loại: 305.568 +Alienated and excluded classes
• Thông tin xuất bản: United States : ACS applied materials & interfaces , 2025
• Bộ sưu tập: NCBI
• ID: 61587

Tóm tắt

Si nanowire transistors are ideal for the sensitive detection of atmospheric species due to their enhanced sensitivity to changes in the electrostatic potential at the channel surface. In this study, we present unique ambipolar Si junctionless nanowire transistors (Si-JNTs) that incorporate both