Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy. However, dopant-selective PEC etching typically relies on highly doped material, which poses challenges for device applications such as quantum defects and photonics that benefit from low doping to produce robust emitter properties and high optical transparency. In this work, we develop a selective PEC process that relies not on high doping but on the electrical depletion of a fabricated diode structure, allowing the selective etching of an