Pulsed Electron Deposition (PED) is a novel technique that can be applied for growing high quality thin films. In this technique, the authors used an electron .beam with a focused diameter of about 1 mm, the energy up to 15 kV, the frequency of 1-10 Hz, the pulse width of 100 ns and the total current of 1.5 kA generated in a discharge system. A remarkable advantage of this technique is the low deviation in composition from bulk to film. By using the PED technique the transparent coducting ZnO and Cu(InGa)Se2 films were prepared. The effect of some deposition conditions on the properties of film has been examined and discussed. For Cu(InGa)Se2, the best film was obtained at the discharge voltage of 12 kV and substrate temperature of 400oC, while for ZnO, the best film was grown at the oxygen pressure of 1.3 Pa and at 400oC.