The CuInS2 (CIS) absorber films of thickness 2.16 um were deposited by Ultrasonic Repeated Spray Pyrolysis technique (URSP). The effect of different substrate temperature on the structural and electrical properties of the films was investigated. Studies have shown that the sprayed CIS films were grown with chalcopyrite structure and Cu-Au ordering mixed. It was found that increasing substrate temperature (Ts = 300-380oC) increased the chalcopyrite structural of CIS films. In all cases, the sprayed- films were p-type semiconductor. The films resistivity was observed to reduce, from 10 exponent 3 + or - 2 cm down to 10 + or - 2 cm, with substrate temperatures. Moreover, the Glass/ZnO/CdS/CIS/Metal solar cells with superstrate structure were also deposited by Full Spray Pyrolysis Deposition (FSPD) evaluate photo voltaic property of films. It was found that the output characteristics of the solar cell: V oc = 395 mV, Jsc = 7.01 mA/cm2, FF = 0.26, and n = 0.74 percent.