Chế tạo dây nano silic bằng phương pháp bốc bay nhiệt

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Tác giả: Quang Sơn Hoàng, Đức Chiến Nguyễn, Hoàng Tuấn Nguyễn, Hữu Lâm Nguyễn, Thị Thúy Nguyễn, Viết Văn Phạm, Xuân Anh Vương

Ngôn ngữ: vie

Ký hiệu phân loại: 539.8 Modern physics

Thông tin xuất bản: Khoa học và Công nghệ, 2012

Mô tả vật lý: 114-118

Bộ sưu tập: Metadata

ID: 630116

Thêm vào giỏ

Silicon nanowires (SiNWs) with different diameters and morphologies grown on Si(111) substrate by thermal evaporation method following the vapor-liquid-solid (VLS) mechanism. Si powder played as a solid source for the formation of the SiNWs. In our experiment, a gold thin film grown on the Si surfaces by electron beam evaporation, was used as catalyst to grow SiNWs. The diameter and morphology of SiNWs were characterized by field emission scanning electron microscope (FESEM). It was shown that the average size of nanowires is about tens of nanometer. The size and morphology of SiNWs were shown depending on the catalyst layer thickness and growing condition.

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