Scalable quantum photonic devices drive the development of compact sources of entangled photons, which are pivotal for quantum communication, computing, and cryptography. In this work, we present entangled photon pair generation in rhombohedral boron nitride (r-BN), leveraging its unique optical and structural properties. Unlike conventional hexagonal boron nitride, which suffers from reduced nonlinear response due to centrosymmetric structure in even-layered stacks, r-BN features interlayer ABC stacking and maintains robust in-plane inversion symmetry. These characteristics lead to highly efficient entangled photon generation. Our system demonstrates an entangled photon pair generation rate up to 8667 Hz/(mW·mm) and offers a tunable platform for Bell state generation by simply adjusting the pump polarization, without compromising the entanglement quality or generation efficiency. The polarization entangled state is measured with a fidelity up to 94%. This advancement not only marks a significant step towards ultrathin, scalable quantum devices but also establishes r-BN as a promising candidate for on-chip integrated quantum optical applications.