Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In