Domain-wall electronics based on the tunable transport in reconfigurable ferroic domain interfaces offer a promising platform for in-memory computing approaches and reprogrammable neuromorphic circuits. While conductive domain walls have been discovered in many materials, progress in the field is hindered by high-voltage operations, stability of the resistive states and limited control over the domain wall dynamics. Here, we show nonvolatile memristive functionalities based on precisely controllable conductive domain walls in tetragonal Pb(Zr,Ti)O