High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium-Tin-Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure.

• Tác giả: Baozhong Chen, Linfeng Lan, Yaping Li, Junbiao Peng, Huimin Su, Jintao Xu, Shuai Yang, Dechun Zeng, Qi Zhou
• Ngôn ngữ: eng
• Ký hiệu phân loại: 325 International migration and colonization
• Thông tin xuất bản: United States : ACS omega , 2025
• Bộ sưu tập: NCBI
• ID: 682929

Tóm tắt

The trade-off between mobility and stability is the main problem for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this work, a high-mobility and good-photostability Tb-doped indium-tin-zinc oxide (Tb:ITZO) AOS is studied. The ITZO TFT without Tb doping had a mobility of as high as 49.4 cm