Junction Field-Effect Transistors Based on MoSe

• Tác giả: Quan Chen, Xuechen Chen, Zuxin Chen, Derek Hao, Qi Huang, Baohua Jia, Jialiang Li, Liang Li, Tianyi Ma, Qi Wang, Xin Zhang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 578.012 Classification
• Thông tin xuất bản: United States : ACS applied materials & interfaces , 2025
• Bộ sưu tập: NCBI
• ID: 685038

Tóm tắt

Two-dimensional (2D) materials show great potential in creating high-performance ultracompact photodetectors. Existing 2D photodetectors are usually designed based on a photogating effect or photovoltaic effect. However, achieving a balance between photodetectivity and photoresponsivity presents a significant challenge due to increased dark currents at trap level recombination or the lack of a gain mechanism. Herein, we rationally design a gate-tunable junction field-effect transistor photodetector based on MoSe