Interband plasmons (IBPs) enable plasmonic behavior in nonmetallic materials, such as semiconductors. Originating from interband electronic transitions, IBPs are characterized by negative real permittivity that can extend into deep ultraviolet (DUV) spectrum, as demonstrated using silicon. However, the practical applications of IBPs are limited by their inherently broad resonances. In this study, we address this limitation by hybridizing the localized plasmon resonance of silicon nanostructures with the Fabry-Pérot resonance of a SiO