Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10

• Tác giả: Fu-Sheng Chang, Tuo-Hung Hou, Kuo-Yu Hsiang, Jia-Yang Lee, Min-Hung Lee, Zhi-Xian Li, Chee Wee Liu, Cheng-Hong Liu, Zhao-Feng Lou, Pin Su
• Ngôn ngữ: eng
• Ký hiệu phân loại: 439.77009 *Swedish
• Thông tin xuất bản: United States : ACS applied materials & interfaces , 2025
• Bộ sưu tập: NCBI
• ID: 691425

Tóm tắt

The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access memory (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide with dual function characteristics of DRAM and storage class memory in the memory hierarchy. Atomic-resolution spherical aberration-corrected scanning transmission electron microscopy is employed to directly reveal the insights of phase evolution by utilizing diffractograms to determine lattice parameters. Storage-data-transfer-cycling-recovery with an alternating access scheme is introduced due to the characteristic of independent domains to exhibit multilevel states. Remanent polarization (