Using a Heavy Inert Diffusion Additive for Superconformal Atomic Layer Deposition.

• Tác giả: Jens Birch, Arun Haridas Choolakkal, Pamburayi Mpofu, Pentti Niiranen, Henrik Pedersen
• Ngôn ngữ: eng
• Thông tin xuất bản: United States : The journal of physical chemistry letters , 2025
• Bộ sưu tập: NCBI
• ID: 691995

Tóm tắt

The shrinking of device nodes increases the demand for deposition processes to seamlessly fill nanometer-scale features. Despite the precision of atomic layer deposition (ALD), it cannot deposit in a V-shaped fashion, which is characteristic of superconformal thin-film deposition. We propose a strategy for superconformal ALD by adding a heavy inert gas as a diffusion additive. We show that the step coverage in an 18:1 aspect ratio feature increased from 1 to 1.6 with the addition of Kr in an ALD process for AlN from Al(CH