Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors.

• Tác giả: Wen-Hao Chang, Tzu-Ang Chao, Chien-Wei Chen, Chao-Hsin Chien, Hsin-Yuan Chiu, Chen-Han Chou, Han-Yi Huang, Chi-Chung Kei, Po-Sen Mao, Matthias Passlack, Gregory Pitner, Iuliana P Radu, Nathaniel Safron, Sheng-Kai Su, H-S Philip Wong, Guan-Zen Wu
• Ngôn ngữ: eng
• Ký hiệu phân loại: 133.594 Types or schools of astrology originating in or associated with a
• Thông tin xuất bản: United States : Nano letters , 2025
• Bộ sưu tập: NCBI
• ID: 692908

Tóm tắt

In this work, we address the off-state leakage current challenge, while simultaneously demonstrating high drive current per CNT, in NMOS and PMOS carbon nanotube field-effect transistors (CNFETs). Increasing the bandgap from 0.6 to 0.85 eV reduces the minimum current from 10