Memristors have garnered increasing attention in neuromorphic computing hardware due to their resistive switching characteristics. However, achieving uniformity across devices and further miniaturization for large-scale arrays remain critical challenges. In this study, we demonstrate the scalable production of highly uniform, quasi-one-dimensional diffusive memristors based on heavily doped n-type silicon nanowires (SiNWs) with diameters as small as ∼50 nm, fabricated via in-plane solid-liquid-solid (IPSLS) growth technology. The edge-line contact structural design improves the control of nucleation sites and the size of conductive filaments (CFs) in Ag/SiO