Fast and efficient Sb-based type-II phototransistors integrated on silicon.

• Tác giả: Simone Bianconi, Nathaniel Coirier, Farah Fahim, Lining Liu, Hooman Mohseni, Skyler Wheaton
• Ngôn ngữ: eng
• Ký hiệu phân loại: 338.456 Production efficiency in specific industries and groups of industries
• Thông tin xuất bản: United States : APL photonics , 2025
• Bộ sưu tập: NCBI
• ID: 697390

Tóm tắt

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2