Two-Photon Absorption in Twisted Graphene/Hexagonal Boron Nitride Heterojunction Tuned by Vertical Electric Field.

• Tác giả: Mengping Chen, Yingliang Chen, Xiaobo Feng, Qiwen Wang, Guang Yang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 497.4552 Penutian, Mayan, Mixe-Zoque, Uto-Aztecan, Kiowa-Tanoan languages
• Thông tin xuất bản: Switzerland : Nanomaterials (Basel, Switzerland) , 2025
• Bộ sưu tập: NCBI
• ID: 699073

Tóm tắt

 We theoretically investigate the comprehensive modulation effect of interlayer twisting and external electric field to the two-photon absorption (TPA) in twisted graphene/hexagonal boron nitride (tG/hBN) heterojunction with small twist angles (2° <
  θ <
  10°) starting from an effective continuum model. It is found that the TPA of tG/hBN is extended to the visible light band from infrared light band of that in twisted bilayer graphene (tBLG) due to the increase in energy band gap caused by twisting and the potential energy of the boron nitride atomic layer. And the TPA coefficient is enhanced several times via an external electric field, which increases the density of states, leading to an increase transition probability for two-photon absorption.