Coherent Structure in Indium Doped Phase Change Materials.

• Tác giả: Yan Cheng, Bo Liu, Cheng Liu, Qianchen Liu, Guangjie Shi, Qiongyan Tang, Rui Wang, Tao Wei, Tianjiao Xin, Yonghui Zheng
• Ngôn ngữ: eng
• Ký hiệu phân loại: 363.732 Incidence, extent, severity
• Thông tin xuất bản: Switzerland : Materials (Basel, Switzerland) , 2025
• Bộ sưu tập: NCBI
• ID: 705877

Tóm tắt

Phase change memory (PCM) technology demonstrates significant potential as a next-generation non-volatile storage solution for information applications. Ge