The Effect of Hydrogen Annealing on the Electronic Conductivity of Al-Doped Zinc Oxide Thin Films.

• Tác giả: Ryoma Kawashige, Hideyuki Okumura
• Ngôn ngữ: eng
• Ký hiệu phân loại: 363.737 Measures to prevent, protect against, limit effects of pollution
• Thông tin xuất bản: Switzerland : Materials (Basel, Switzerland) , 2025
• Bộ sưu tập: NCBI
• ID: 706071

Tóm tắt

In this research, Hall effect experiments and optical fittings were mainly conducted to elucidate the effect of hydrogen annealing on the electronic properties of polycrystalline Al-doped Zinc Oxide thin films by distinguishing the scattering by ion impurities and the scattering by grain boundaries. By comparing the carrier density and those mobilities of H