Characteristics of 3D-Integrated GaN Power Module Under Multi Heat Source Coupling.

• Tác giả: Xinghuan Chen, Yuan Chen, Liang He, Caixing Hui, Guoguang Lu, Xiangjun Lu, Mingen Lv, Yijun Shi
• Ngôn ngữ: eng
• Thông tin xuất bản: Switzerland : Materials (Basel, Switzerland) , 2025
• Bộ sưu tập: NCBI
• ID: 706173

Tóm tắt

3D-integrated GaN power modules can effectively reduce parasitic parameters and enhance the power system's performance. However, the heat from each power chip during operation can lead to a mutual thermal coupling effect, potentially causing performance drift of the GaN power chips. This work investigates the impact of the thermal coupling effect in a 3D-integrated GaN power module on the characteristics of its GaN power chips. The GaN power chips' characteristics are measured before and after the other power chips in the 3D-integrated GaN power module and after applying