Improvement of Electrical Transport Performance of BiSbTeSe

• Tác giả: Fuhong Chen, Deng Hu, Haoyu Qi, Zhiwei Wang, Liu Yang, Xin Zhang, Yuqi Zhang, Peng Zhu
• Ngôn ngữ: eng
• Thông tin xuất bản: Switzerland : Materials (Basel, Switzerland) , 2025
• Bộ sưu tập: NCBI
• ID: 706230

Tóm tắt

A topological insulator with large bulk-insulating behavior and high electron mobility of the surface state is needed urgently, not only because it would be a good platform for studying topological surface states but also because it is a prerequisite for potential future applications. In this work, we demonstrated that tin (Sn) or indium (In) dopants could be introduced into a BiSbTeSe