Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems.

• Tác giả: Tetsuo Endoh, Hiroaki Honjo, Shoji Ikeda, Hirofumi Inoue, Tufan Roy, Yoshiaki Saito, Masafumi Shirai
• Ngôn ngữ: eng
• Ký hiệu phân loại: 296.11641 Sources
• Thông tin xuất bản: England : Scientific reports , 2025
• Bộ sưu tập: NCBI
• ID: 714308

Tóm tắt

Synthetic antiferromagnetic (AF) pinned layers are widely used in order to reduce the stray field of the pinned layer and stabilize the magnetic alignment of the reference layer in perpendicular magnetic tunnel junctions (MTJs). Here, a detailed study of Re concentration dependence of the magnitude of interlayer exchange coupling (|J