Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization.

• Tác giả: Sergey Faleev, Yari Ferrante, Panagiotis Ch Filippou, Chirag Garg, Brian Hughes, Ikhtiar, Jaewoo Jeong, Stuart S P Parkin, Timothy Phung, Charles T Rettner, Mahesh G Samant, Teya Topuria, See-Hun Yang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 439.77009 *Swedish
• Thông tin xuất bản: England : Nature nanotechnology , 2025
• Bộ sưu tập: NCBI
• ID: 720687

Tóm tắt

Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy Mn