Homochiral carbon nanotube van der Waals crystals.

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Tác giả: Jiajun Chen, Yi Chen, Jinfeng Jia, Chuanhong Jin, Haonan Li, Qi Liang, Shuo Lou, Bosai Lyu, Saiqun Ma, Wengen Ouyang, Dong Qian, Peiyue Shen, Zhiwen Shi, Takashi Taniguchi, Bo Wang, Guohua Wang, Liguo Wang, Sen Wang, Xiaoqun Wang, Kenji Watanabe, Zhenghan Wu, Yufeng Xie, Kunqi Xu, Wei Yang, Chengjia Zhang, Guangyu Zhang, Zhichun Zhang, Xianliang Zhou

Ngôn ngữ: eng

Ký hiệu phân loại:

Thông tin xuất bản: United States : Science (New York, N.Y.) , 2025

Mô tả vật lý:

Bộ sưu tập: NCBI

ID: 723316

For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high-tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of ~10
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