Spin Hall nano-oscillators (SHNOs) have garnered significant attention in the field of spintronics in recent years, particularly for their potential in neuromorphic computing. However, their sensitive regions, often below 200 nm, present considerable challenges for fabrication. The current mainstream approach relies on electron beam lithography (EBL) to define the shapes of SHNOs. While EBL is both costly and time-consuming, it is less ideal for the large-scale development and application of SHNOs. In this paper, we proposed a novel fabrication method for nano-wire SHNOs using sidewall transfer lithography. This approach offers a practical solution to enhance fabrication efficiency while simultaneously reducing production costs, making it more suitable for mass production. Through experimental demonstrations, we validated the feasibility of this method and provided detailed insights into the sidewall transfer lithography process. Our findings suggest that this technique achieves higher theoretical accuracy than current fabrication methods, offering a cost-effective pathway for realizing large-scale arrays of SHNOs and promoting their application in advanced computing technologies.