We report an indium phosphide (InP)-on-silicon laser operating at short-wave infrared (SWIR) wavelengths, realized using micro-transfer printing (μTP) technology. Through thermal tuning of the integrated micro-ring resonators, the device is tunable from 1643 nm to 1707 nm, with mW-level output power at room temperature for a drive current of 100 mA on an amplifier. The laser cavities are fabricated on 200 mm silicon-on-insulator (SOI) wafers, featuring a 220 nm thick silicon device layer.