High responsivity lateral GaN film photoconductive semiconductor switch based on sapphire substrates for high-power application.

• Tác giả: Ping Cai, Chun Feng, Lijuan Jiang, Wei Li, Chongbiao Luan, Qian Wang, Xiaoliang Wang, Hongling Xiao, Jiankai Xu, Miao Zhou
• Ngôn ngữ: eng
• Thông tin xuất bản: United States : Optics letters , 2025
• Bộ sưu tập: NCBI
• ID: 728476

Tóm tắt

Gallium nitride (GaN) materials have high absorption coefficient and wide bandgap. In this work, an excellent ohmic contact electrode with low specific contact resistivity of 5.9 × 10