Micro light-emitting diode (Micro-LED) is widely regarded as a highly promising technology in the current display field due to its excellent performance, but the core issue hindering the further development of Micro-LED is how to achieve high-precision and high-yield transfer. In this study, laser-induced forward transfer (LIFT) is adopted as the main technique, and a novel blister-type dynamic release layer (DRL) material is selected, characterized by a gentle transfer process and minimal residue on the chip after transfer. Chip-on-wafer (COW) is a structure that fabricates a large number of Micro-LEDs (15 × 30 μm