Infrared photodetectors have garnered significant attention in modern optoelectronics due to various applications. However, uncooled infrared photodetectors based on narrow-bandgap materials suffer from high dark current arising from thermal carrier excitation, posing a major challenge in achieving state-of-the-art infrared photodetectors with a blackbody response. In this work, we propose a van der Waals (vdW) complementary barrier infrared detector (CBD), which is composed of an electron barrier from gold/black phosphorus (Au/BP) Schottky contact and a hole barrier from molybdenum disulfide (MoS