Effective control of electric field intensity/distribution in field-effect transistors restrains channel self-heating and drives reliable operation over the entire lifetime. However, in two-dimensional material (2DM)-based transistors, it is a great challenge to manipulate the lateral electric field via the dedicated drain/source structure design due to the lack of a CMOS-compatible doping strategy. Here, we developed a widely tunable and high-spatial-resolution doping technology for 2DMs, contributing to effective lateral electric field modulation in 2DM-based transistors. We employed Ar plasma treatment on intrinsic PtSe