Exploring the Advanced Optoelectronic Properties of Nd-Doped ZnO Thin Films for Next-Generation Perovskite Solar Cells.

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Tác giả: Muqarrab Ahmed, Qasim Ali, Nadia Anwar, Muhammad Azhar, Wen-Cheng Lai, Shahzad Naseem, Ghazi Aman Nowsherwan, Nadia Nowsherwan, Saira Riaz

Ngôn ngữ: eng

Ký hiệu phân loại: 371.1023 Teachers and teaching, and related activities

Thông tin xuất bản: United States : ACS omega , 2025

Mô tả vật lý:

Bộ sưu tập: NCBI

ID: 747056

This research provides valuable insights into the effects of neodymium (Nd) doping on the structural, optical, and electrical properties of zinc oxide (ZnO) thin films coated on an ITO substrate. This study deepened our understanding of the unique characteristics and potential applications of these materials by utilizing comprehensive characterization techniques, including X-ray diffraction (XRD), Atomic Force Microscopy (AFM), UV-vis spectroscopy, and photoluminescence spectroscopy. XRD analysis confirmed the presence of hexagonal crystal structures, whereas AFM imaging revealed a distinctive granular configuration. The results indicated that the grain size of the thin films increased from 35.86 to 46.09 nm with increasing Nd doping concentration, demonstrating a relationship between Nd concentration and microstructure. The optical bandgap ranged from 3.29 to 3.21 eV for pure and doped thin films at different DC sputtering powers, and the electrical resistivity decreased from 1.54 × 10
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