Emulating and enhancing human olfactory capabilities, artificial olfactory technology provides adept detection of subtle odors, gases, and various chemical substances. Metal oxide semiconductors (MOSs) are ideal materials for next-generation artificial olfactory devices due to their outstanding gas sensing performance, characterized high sensitivity, high response speed, and robust stability, as well as their compatibility with microfabrication. For broader applications, developing a comprehensive database of diverse odorants is crucial, which necessitates expanding the types of MOS channels in artificial olfactory devices. This paper reports a laser-induced oxidation-based artificial olfactory device using a 7 × 3 sensor array composed of three metal oxides (SnO