The current international demand for thin-film transistors is growing, and reducing the time and economic cost of production while preparing thin-film transistors with excellent electrical properties will have a profound impact on the future development of thin-film transistors. In this paper, we choose the sol-gel method to prepare IZO TFTs, which can reduce the production cost and cycle time by 60% compared with the preparation method that requires vacuum conditions. Since the annealing temperature has a great influence on the electrical properties of IZO TFTs, in this study, we focus on the effect of different annealing temperatures on the electrical properties of IZO TFT devices, and analyze and study the results of the test results of the film structural properties, optical properties, surface morphology,