Nanostrain patterning in two-dimensional transition metal dichalcogenides can enhance electrical and optoelectronic performance. However, from the viewpoint of device configurations, existing strategies cannot obtain controllable localized strain distribution with high-density integration capability nor effectively integrate with field effect transistors (FETs) for efficient electric field tunability. In this work, by leveraging both thermal scanning probe lithography and silk fibroin (SF), we achieved controllable nanostrain patterning in monolayer and bilayer WSe